Method for fabricating solar cell

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

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136256, 438 97, 438958, H01L 3118

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056375107

ABSTRACT:
In a method of producing a solar cell, a photovoltaic thin semiconductor crystalline film is formed on an underlying substrate and hydrogen passivated throughout the film thickness direction of the photovoltaic film whereby a high efficiency solar cell is obtained. In addition, since the passivation process is performed before forming a rear surface electrode on the thin semiconductor crystalline film, the passivation process is not limited by the rear surface electrode. Thereby, a solar cell having a higher energy conversion efficiency is obtained. The passivation process is performed by exposing the thin semiconductor crystalline film to a hydrogen ion ambient having a low acceleration energy, below 2 KeV, or to a plasma ambient. Therefore, the uniformity of the passivation process at a wafer surface is improved and a large area wafer can be efficient processed. Furthermore, the passivation process can be performed to a plurality of solar cells having the thin semiconductor crystalline films and arranged in a module.

REFERENCES:
patent: 5472885 (1995-12-01), Matsuno et al.
Schmidt et al, "Improved Efficiencies Of Semiconductor And Metallurgical Grade Cast Silicon Solar Cells By Hydrogen Plasma Treatment", Sixteenth IEEE Photovoltaic Specialists Conference, 1982, pp. 537-542.
Yagi et al, "Hydrogen Passivation Of Large-Area Polycrystalline Silicon Solar Cells By High-Current Ion Implantation", Twentieth IEEE Photovoltaic Specialists Conference, 1988, pp. 1600-1603.

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