Method for fabricating silicon semiconductor discrete wafer

Details Method for fabricating silicon semiconductor discrete wafer Method for fabricating silicon semiconductor discrete wafer

1997-07-22

2000-05-23

Hiteshew, Felisa

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438753, 216 52, 216 53, 216 99, 125 1101, 451446, H01L 21302, B24B 5300

Patent

active

060665629

ABSTRACT:
A method of fabricating a silicon semiconductor discrete wafer is disclosed that assures excellent finishing accuracy and productivity. The method for fabricating a discrete wafer having a double-layer structure including an impurity diffused layer at one side and an impurity non-diffused layer at the opposite side includes cutting a wafer, having one of the impurity diffused layers formed on both surfaces of the silicon semiconductor wafer and having an oxide film formed on the surface of the diffused layer, into two pieces at the center of thickness with an ID saw slicing machine. Then, both surfaces of the cutting surface are ground to a predetermined thickness with a surface grinding machine, and the grinding surfaces are lapped with abrasive grains having a count of at least #2000 and no more than #6000. The processing surface is wet-etched as the final processing.

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European Search Report and Annex, EP97112407 Nov. 5, 1997.

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