Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1981-10-21
1983-12-06
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 29576B, 148 15, 148187, 357 23, 357 49, 357 51, H01L 2980, H01L 2702, H01L 2904
Patent
active
044184700
ABSTRACT:
A fabrication technique for monolithic microwave integrated circuits employs silicon-on-sapphire wafers. Active and passive elements are formed together in a series of implant and deposition steps. Electrically isolated islands of semiconductor material are defined upon the substrate. Multiple metallization deposits are employed to simultaneously interconnect the individual circuit elements and form passive elements upon the integrated circuit. The technique allows mass production of integrated circuits with considerable raw material savings.
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Cady William R.
Hwang Ying-Chen
Naster Ronald J.
Parks Earl L.
Zaidel Simon A.
Baker Carl W.
General Electric Company
Lang Richard V.
Roy Upendra
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