Fishing – trapping – and vermin destroying
Patent
1991-04-01
1991-10-15
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 65, 437 67, 437 72, 437 78, 437927, 437974, 437 21, 437203, 148 332, 148 335, 148DIG135, 357 49, 357 55, H01L 2176
Patent
active
050574507
ABSTRACT:
A fabrication method for forming SOI structures where perfect material is grown epitaxially on a substrate and then, through a series of selective etches and oxidations, an insulating layer is formed below the epitaxial silicon. In the method, low temperature epitaxial techniques are employed to grow a layered structure including a first layer p++ silicon on a substrate wafer, a layer of intrinsic silicon is then formed on the first p++ silicon layer, and a second layer of p++ silicon is formed on the intrinsic silicon layer, and a finally a layer of p-silicon is fabricated on top of the second p++ silicon layer. Grooves are formed through the p-layer, the second p++ silicon layer, the intrinsic silicon layer, and stopped in the first p++ silicon layer. An etch is then employed to remove the intrinsic layer long enough for the p++ silicon layer to be totally undercut, leaving an air gap between the two p++ silicon layers. An oxidation step is then performed to form a bottom insulator consisting of the oxidized first p++ silicon layer and on an upper insulator consisting of the oxidized second p++ silicon layer.
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Bronner Gary B.
Fahey Paul M.
Meyerson Bernard S.
Pricer Wilbur D.
Goodwin John J.
Hearn Brian E.
International Business Machines - Corporation
Quach T. N.
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