Method for fabricating shallow junctions by preamorphizing with

Details Method for fabricating shallow junctions by preamorphizing with Method for fabricating shallow junctions by preamorphizing with

1988-05-20

1989-12-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 28, 437950, H01L 21265

Patent

active

048898198

ABSTRACT:
Shallow junctions of a first conductivity type in a semiconductor of the opposite conductivity type are fabricated by doping the substrate with a dopant of an opposite conductivity type than the first conductivity type to preamorphize portions of the substrate. The dopant of the opposite conductivity type must have a molecular weight that is higher than the molecular weight of the substrate. The substrate is then doped with the dopant of the first conductivity type to form the shallow junctions.

REFERENCES:
patent: 4456489 (1984-06-01), Wu
patent: 4584026 (1986-04-01), Wu et al.
patent: 4617066 (1986-10-01), Vasudev
patent: 4637836 (1987-01-01), Flatley et al.
patent: 4655875 (1987-04-01), Wada et al.

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