Method for fabricating sensor devices having improved...

Details Method for fabricating sensor devices having improved... Method for fabricating sensor devices having improved...

2006-06-20

2006-06-20

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

Reexamination Certificate

active

07063985

ABSTRACT:
The invention provides an magnetic memory element having improved switching properties and zero field offset, and a manufacturing method thereof. The element comprises a first magnetic layer overlying a conductive layer and a nonmagnetic layer overlying the first magnetic layer. Next, a second magnetic layer is provided over the nonmagnetic layer, wherein the second magnetic layer comprises an antiferromagnetic layer overlying a ferromagnetic free layer to apply a small bias to the ferromagnetic free layer. Then, the first magnetic, nonmagnetic and second magnetic layers are patterned to form the memory element.

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