Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-01-30
2007-01-30
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
Reexamination Certificate
active
10299246
ABSTRACT:
High quality epitaxial layers of monocrystalline oxide materials (24) can be grown overlying monocrystalline substrates (22) such as large silicon wafers. The monocrystalline oxide layer (24) comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer serves as a decoupling layer between the substrate and the buffer layer so that the substrate and the buffer is crystal-graphically, chemically, and dielectrically decoupled. In addition, high quality epitaxial accommodating buffer layers may be formed overlying vicinal substrates using a low pressure, low temperature, alkaline-earth metal-rich process.
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Droopad Ravindranath
Hu Xiaoming
Liang Yong
Wang Jun
Wei Yi
Booth Richard A.
Freescale Semiconductor Inc.
LandOfFree
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