Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2006-08-22
2006-08-22
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000, C257SE21122
Reexamination Certificate
active
07094664
ABSTRACT:
Multilayer films (2to7) containing a light absorption layer (4) are formed on a GaAs substrate. After laminating the GaAs substrate (1) and a glass substrate (8) so that an uppermost surface film (7) of the multilayer film and the glass substrate (8) may come into contact with each other, by pressurizing between the GaAs substrate (1) and the glass substrate (8) and heating them together, both substrates (1) and (8) are fusion-bonded. Next, the GaAs substrate (1) and the buffer layer (2) are first removed, and then the etch stop layer (3) is removed. Then, while coming into contact with the light absorption layer (4), comb-type Schottky electrodes (10) and (11), which are mutually apart, are formed.
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Nakajima Kazutoshi
Niigaki Minoru
Drinker Biddle & Reath LLP
Hamamatsu Photonics K.K.
Kebede Brook
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