Method for fabricating semiconductor photodetector

Details Method for fabricating semiconductor photodetector Method for fabricating semiconductor photodetector

1983-12-13

1985-08-27

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29572, 29578, 148187, H01L 2122

Patent

active

045369461

ABSTRACT:
A semiconductor photodetector, and a process for producing a semiconductor photodetector, having a shielding gate region isolated from drain or source regions with only a small junction capacitance therebetween. The photodetector is implemented with a vertical static induction transistor. In the static induction transistor, a control gate region is formed on a first principal surface of a silicon wafer. The shielding gate region is formed on the principal surface surrounding the control gate region. At least one first principal electrode region is formed on the first principal surface between the control region and the shielding gate region. A second principal electrode region is formed on a second principal surface of the wafer on the side thereof opposite the first principal electrode region. The shielding gate region is formed in the silicon wafer at a position deeper than the first principal electrode region.

REFERENCES:
patent: 4377900 (1983-03-01), Nonaka et al.
patent: 4409725 (1983-10-01), Hotta et al.
patent: 4449284 (1984-05-01), Shimbo
patent: 4466175 (1984-08-01), Coe
patent: 4499654 (1985-02-01), Nishizawa et al.
patent: 4502203 (1985-03-01), Nishizawa et al.
patent: 4505022 (1985-03-01), Briere

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