Method for fabricating semiconductor photodetector

Details Method for fabricating semiconductor photodetector Method for fabricating semiconductor photodetector

1983-12-13

1985-03-05

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29572, 29578, 148187, H01L 2122, H01L148187

Patent

active

045022038

ABSTRACT:
A method for fabricating a photodetector device including a single pixel or an array of pixels, each of which is constituted by a single vertical type SIT (Static Induction Transistor). First and second main electrode regions are formed on respective first and second main surfaces of a silicon wafer. Control gate and shielding gate regions, as well as drain and source regions as well, are formed using a single common masking step. As a result, the formation of these regions is precisely controlled, resulting in superior photoresponse characteristics.

REFERENCES:
patent: 4377900 (1983-03-01), Nonaka et al.
patent: 4406052 (1983-09-01), Cogan
patent: 4409725 (1983-10-01), Hotta et al.
patent: 4442592 (1984-04-01), Kemmer
patent: 4446175 (1984-08-01), Coe
patent: 4449284 (1984-05-01), Shimbo

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