Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1983-12-13
1985-02-19
Ozaki, G.
Metal working
Method of mechanical manufacture
Assembling or joining
29572, 29578, 148187, H01L 2122, H01L 21265
Patent
active
044996543
ABSTRACT:
A method for forming a semiconductor photodetector array having a matrix of pixels, each constituted by a single SIT (Static Induction Transistor). A field oxide layer is formed on a first main surface of a silicon wafer. Portions of a field oxide layer are then removed from predetermined regions of the first main surface. In these predetermined regions are formed a control gate region and a shielding gate region, with the shielding gate region surrounding the control gate region. Oxide layers are formed on the control gate region and shielding gate region. Portions of the field oxide layer between the control gate region and shielding region are removed to partially expose the first main surface of the silicon wafer, and a first main electrode region is formed in the exposed portion. A first conductive electrode is then deposited on the first main region, whereupon the entirety of the first main surface of the silicon wafer is covered with a first insulating layer. Portions of the first insulating layer are then removed from the control gate region, and the entirety of the first main surface of the silicon wafer is covered with a second insulating layer. A second conductive electrode is then formed on the second insulating layer upon the control gate region. Portions of the first and second insulating layers and the oxide on the shielding gate region are removed to provide a contact hole. The first main surface of the silicon wafer is then covered with a metal layer, portions of which are subsequently removed from the control gate region. Finally, an electrode for the second main electrode region is deposited on the second main surface.
REFERENCES:
patent: 4377900 (1983-03-01), Nonaka et al.
patent: 4406052 (1983-09-01), Cogan
patent: 4409725 (1983-10-01), Hotta et al.
patent: 4442592 (1984-04-01), Kemmer
patent: 4446175 (1984-08-01), Coe
Nishizawa Jun-ichi
Suzuki Soubei
Tamamushi Takashige
Nishazawa Kimocjo
Ozaki G.
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