Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2006-01-24
2006-01-24
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
C438S746000, C438S039000, C438S047000, C438S022000, C438S051000, C438S751000
Reexamination Certificate
active
06989312
ABSTRACT:
Provided is a method for fabricating a semiconductor optical device that can be used as a reflecting semiconductor mirror or an optical filter, in which two or more types of semiconductor layers having different etch rates are alternately stacked, at least one type of semiconductor layers is selectively etched to form an air-gap structure, and an oxide or a nitride having a good heat transfer property is deposited so that the air gap is buried, whereby it is possible to effectively implement the semiconductor reflector or the optical filter having a high reflectance in a small period because of the large index contrast between the oxide or the nitride buried in the air gap and the semiconductor layer.
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Han Won Seok
Ju Young Gu
Kim Jong Hee
Kwon O Kyun
Park Sang Hee
Anya Igwe U.
Baumeister B. William
Electronics and Telecommunications Research Institute
Mayer Brown Rowe & Maw LLP
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