Method for fabricating semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Reexamination Certificate

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C257S013000, C257S088000, C257S098000

Reexamination Certificate

active

06958493

ABSTRACT:
A method for fabricating a semiconductor light emitting device, the method comprising the steps of: repeatedly forming, on a first nitride based Group III–V compound semiconductor layer, stripe-shaped masking films in a predetermined cycle in a width-wise direction thereof, each masking film comprising first width sections having a predetermined width and second width sections which are adjacent to both ends of each first width section and have a greater width than the predetermined width; selectively growing a second nitride based Group III–V compound semiconductor layer from exposed parts of a surface of the first nitride based Group III–V compound semiconductor so as to cover the masking films and the exposed parts, each of the exposed parts being located between the masking films; and layering a semiconductor laser structure on the second nitride based Group III–V compound semiconductor layer, the semiconductor laser structure including an active layer which substantially extends in a length-wise direction of the masking films and level difference portions which extend in the width-wise direction by a structure in which a portion located above the second width sections is lower than a portion located above the first width sections.

REFERENCES:
patent: 5757833 (1998-05-01), Arakawa et al.
patent: 6355497 (2002-03-01), Romano et al.
patent: 6562701 (2003-05-01), Ishida et al.
patent: 6563139 (2003-05-01), Hen
patent: 6577006 (2003-06-01), Oota et al.
patent: 6720586 (2004-04-01), Kidoguchi et al.
patent: 6737801 (2004-05-01), Ragle
patent: 6756245 (2004-06-01), Ohbo et al.
patent: 63-001370 (1988-01-01), None
patent: 63-034992 (1988-02-01), None
patent: 05-259079 (1993-10-01), None
patent: 05-343813 (1993-12-01), None
patent: 09-191150 (1997-07-01), None
patent: 2000-196188 (2000-07-01), None
patent: 2001-244560 (2001-09-01), None
Shuji Nakamura, “InGaN Multiquantum-Well-Structure Laser Diodes with GaN-AlGaN Modulation-Doped Strained-Layer Superlattices”, IEEE Journal of Selected Topics in Quantum Electronics, vol. 4, No. 3, May/Jun. 1998, p. 483-489.
H. Marchand, et al., “Mechanisms of Lateral Expitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition”, Journal of Crystal Growth, 195 (1998) 328:332.
Shuji Nakamura, et al., “InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices Grown on an Expitaxially Laterally Overgrown GaN Substrate”, Applied Physics Letters, vol. 72, No. 2, pp. 211-213 (1998).
Shuji Nakamura, “UV/Blue/Green InGaN-Based LEDs and Laser Diodes Grown on Epitaxially laterally Overgrown GaN”, IEICE Trans. Electron., Vo.E83-C, No. 4, Apr. 2000, p. 529-535.
Michael Kneissl, et al., “Performance and Degradation of Continuous-wave InGaN Multiple-Quantum-Well Laser Diodes on Epitaxially Laterally Overgrown GaN Substrates”, Applied Physics Letters, vol. 77, No. 13, Sep. 25, 2000, pp. 1931-1933.

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