Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-10-25
2005-10-25
Picardat, Kevin M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S013000, C257S088000, C257S098000
Reexamination Certificate
active
06958493
ABSTRACT:
A method for fabricating a semiconductor light emitting device, the method comprising the steps of: repeatedly forming, on a first nitride based Group III–V compound semiconductor layer, stripe-shaped masking films in a predetermined cycle in a width-wise direction thereof, each masking film comprising first width sections having a predetermined width and second width sections which are adjacent to both ends of each first width section and have a greater width than the predetermined width; selectively growing a second nitride based Group III–V compound semiconductor layer from exposed parts of a surface of the first nitride based Group III–V compound semiconductor so as to cover the masking films and the exposed parts, each of the exposed parts being located between the masking films; and layering a semiconductor laser structure on the second nitride based Group III–V compound semiconductor layer, the semiconductor laser structure including an active layer which substantially extends in a length-wise direction of the masking films and level difference portions which extend in the width-wise direction by a structure in which a portion located above the second width sections is lower than a portion located above the first width sections.
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Hasegawa Yoshiaki
Shimamoto Toshitaka
Sugahara Gaku
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Picardat Kevin M.
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