Method for fabricating semiconductor laser element and the...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal

Reexamination Certificate

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Details

C438S031000, C438S035000, C438S039000

Reexamination Certificate

active

06991950

ABSTRACT:
There is provided a semiconductor laser element which can change band gap wavelengths without change of composition of a multiple quantum well active layer and a method for fabricating a semiconductor laser module. In the method for fabricating a semiconductor laser element wherein a multiple quantum well active layer is formed on a semiconductor substrate with a crystal growth method, an insulation film is formed at the upper part of the multiple quantum well active layer, an electrode film is moreover formed on the insulation film and at least a part of the electrode film is electrically connected to the multiple quantum well active layer, distortion of the multiple quantum well active layer is controlled in the semiconductor laser element fabrication process after the process of the crystal growth method.

REFERENCES:
patent: 5496767 (1996-03-01), Yoshida
patent: 6370176 (2002-04-01), Okumura
patent: 6858877 (2005-02-01), Kawaguchi et al.
patent: 07-226563 (1995-08-01), None
patent: 10-117040 (1998-05-01), None
patent: 2000-100728 (2000-04-01), None

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