Method for fabricating semiconductor laser and photo detecting a

Details Method for fabricating semiconductor laser and photo detecting a Method for fabricating semiconductor laser and photo detecting a

1994-07-14

1996-06-18

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437127, 437129, H01L 2120

Patent

active

055277322

ABSTRACT:
The invention provides a method of fabricating two dimensional semiconductor surface emitting laser and photo detector arrays for wavelength division multiplexing optical interconnections. A first stacked multiple layer structure on a first semiconductor substrate. An intermediate layer is grown on the first stacked multiple layer structure. A second stacked multiple layer structure is grown on the intermediate layer. A second semiconductor substrate is adhered on a top of the second stacked multiple layer structure by a heat treatment thereby a wafer is grown in successive growth processes to receive a selective wet etching so that the intermediate layer only is selectively etched to separate the first and second stacked multiple layer structures from one another, followed by forming surface emitting laser arrays and photo detector arrays on the first and second semiconductor substrates respectively.

REFERENCES:
patent: 4976539 (1990-12-01), Carlson et al.
patent: 5023944 (1991-06-01), Bradley
patent: 5228103 (1993-07-01), Chen et al.
patent: 5376580 (1994-12-01), Kish et al.
patent: 5453405 (1995-09-01), Fan et al.
By C. Chang-Hasnain et al., "Multiple Wavelength Tunable Surface-Emitting Laser Arrays", IEEE Journal of Quantum Electronics, Jun. 1991, vol. 27, No. 6, pp. 1368-1376.
By H. Kosaka et al., "Pixels Consisting of Double Vertical-Cavity Detector and Single Vertical-Cavity Laser Sections for 2-D Bidirectional Optical Interconnections", Jpn. J. Appl. Phys, 1993, vol. 32, pp. 600-603.

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