Method for fabricating semiconductor devices which lessens the e

Details Method for fabricating semiconductor devices which lessens the e Method for fabricating semiconductor devices which lessens the e

1993-04-28

1994-03-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 48, 437206, H01L 21265, H01L 2360

Patent

active

052907112

ABSTRACT:
In a method for fabricating a semiconductor device of the present invention, photoresist layers are not formed on a scribe line regions entirely. Therefore, electric charge can be transferred from device regions to out of a wafer by surface conduction, when impurity layers are formed on a substrate by ion implantation.

REFERENCES:
patent: 4139935 (1979-02-01), Bertin et al.
patent: 4258077 (1981-03-01), Mori et al.
patent: 4883543 (1989-11-01), Gossen, Jr.
patent: 5015600 (1991-05-01), Livermore et al.
patent: 5079609 (1992-01-01), Takagi

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