Method for fabricating semiconductor devices utilizing oxide pro

Details Method for fabricating semiconductor devices utilizing oxide pro Method for fabricating semiconductor devices utilizing oxide pro

1975-09-22

1977-04-19

Dean, R.

Metal treatment

Compositions

Heat treating

148175, 148187, 156659, 357 91, H01L 21265, H01L 2131

Patent

active

040186270

ABSTRACT:
Defect formations and unwanted in diffusions caused by residual impurity products is prevented in a semiconductor fabrication method which includes the step of forming a composite mask which simultaneously defines base, collector and diffusion isolation openings. After these openings are defined a thin protective layer of silicon dioxide is grown over the exposed area and remains there throughout the remainder of the doping process which includes the steps of selectively covering areas which are not to be doped with photoresist and thereafter ashering the photoresist to remove it in preparation for the next ion implantation step. The thin protective layer of silicon dioxide protects nonselected areas against residual impurity products formed during removal of the photoresist.

REFERENCES:
patent: 3542551 (1970-11-01), Rice
patent: 3551221 (1970-12-01), Yanagawa
patent: 3560278 (1971-02-01), Sanera
patent: 3793088 (1974-02-01), Eckton
patent: 3920483 (1975-11-01), Johnson et al.
patent: 3925105 (1975-12-01), Sloan
patent: 3928081 (1975-12-01), Marley et al.
patent: 3928082 (1975-12-01), Schwettmann et al.
patent: 3933528 (1976-01-01), Sloan
Irving, S. M., "Plasma Oxidation . . . Photo Resist Films", Solid State Technology, June 1971, pp. 47-51.
Berger et al., "Masking Process for Base and Isolation Diffusion", I.B.M. Tech. Discl. Bull., vol. 14, No. 5, Oct. 1971, pp. 1612-1613.

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