Method for fabricating semiconductor devices having lightly dope

Details Method for fabricating semiconductor devices having lightly dope Method for fabricating semiconductor devices having lightly dope

1994-12-29

1998-06-23

Quach, T. N.

Fishing, trapping, and vermin destroying

437 52, 437195, H01L 21334

Patent

active

057704643

ABSTRACT:
A method for fabricating a semiconductor device comprises the steps of depositing polysilicon on a semiconductor substrate for a gate electrode and word line and then depositing insulating oxide layer thickly over the polysilicon. The method forms fine patterns accurately, and forms the contact hole and the gate electrode simultaneously, which prevents short circuit between conductors. The method also reduces the defects or particles which are frequently generated in prior mask and polysilicon and polysilicon spacer processes, so that the reliability and production yield of semiconductor devices may be improved.

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