Method for fabricating semiconductor devices having an HDP-CVD o

Details Method for fabricating semiconductor devices having an HDP-CVD o Method for fabricating semiconductor devices having an HDP-CVD o

1999-06-08

2000-07-11

Bowers, Charles

Semiconductor device manufacturing: process

Forming tapered edges on substrate or adjacent layers

438666, 438667, 438668, 438672, 438673, H07L 2100

Patent

active

060872780

ABSTRACT:
There is provided a method for fabricating a semiconductor device, by which passivation layers are formed with good step coverage to prevent crack or void from being occurred in high aspect ratio of metallization layers and the time for performing the processes can be decreased to enhance the productability and the yield of the device. The method is performed as follows. Over a substrate having completed metallization layers, an oxide layer is formed as a first passivation layer by high-density plasma chemical vapor deposition (HDP-CVD). On the HDP-CVD oxide layer, a nitride layer is formed as a second passivation layer by plasma enhanced chemical vapor deposition (PECVD) or HDP-CVD.

REFERENCES:
patent: 5094900 (1992-03-01), Langley
patent: 5621241 (1997-04-01), Jain
patent: 5721173 (1998-02-01), Yano et al.
patent: 5728621 (1998-03-01), Zheng et al.
patent: 5759906 (1998-06-01), Lou
patent: 5789315 (1998-08-01), Besser et al.
patent: 5814564 (1998-09-01), Yao et al.
patent: 5851899 (1998-12-01), Weigand
Redeker Fred C et al., "Plasma Source For HDP-CVD Chamber", Patent Abstracts of Japan, Application No. 10028509, filed Feb. 10, 1998.

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor devices having an HDP-CVD o does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor devices having an HDP-CVD o, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor devices having an HDP-CVD o will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-542092