Method for fabricating semiconductor devices

Details Method for fabricating semiconductor devices Method for fabricating semiconductor devices

1992-03-06

1993-08-17

Fourson, George

Fishing, trapping, and vermin destroying

437 30, 437 41, 437 46, 437 47, 437918, H01L 21336

Patent

active

052368513

ABSTRACT:
A method for fabricating a bipolar or field effect-type integrated circuit transistor is provided in which non-crystalline semiconductor films and semiconductive regions formed in a single crystal semiconductor substrate and containing high concentrations of impurities are efficiently connected with improved electric characteristics while suppressing the influence of an increase in connection resistance caused by growth of a natural oxide film. Moreover, when a first non-crystalline semiconductor film is removed from a dielectric oxide film serving as a field film and a second non-crystalline semiconductor film is formed as a ribbon-shaped pattern on the exposed field film, a resistor of high accuracy can be formed. An interconnection system having resistors of a high accuracy and a fine size is also disclosed.

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