Method for fabricating semiconductor devices

Details Method for fabricating semiconductor devices Method for fabricating semiconductor devices

1996-12-18

1997-11-04

Trinh, Michael

Fishing, trapping, and vermin destroying

437 57, 437162, H01L 218238

Patent

active

056839200

ABSTRACT:
A method for fabricating a semiconductor device which is capable of forming an ultra-shallow junction causing no defect in source/drain regions. The method includes the steps of providing a semiconductor substrate formed with n and p type wells and element-isolating films, forming gate oxide films on the n and p type wells, respectively, forming a polysilicon film over the entire exposed upper surface of the resulting structure, implanting first impurity ions having an n type conductivity in a portion of the polysilicon film disposed over the p type well, implanting first impurity ions having a p type conductivity in a portion of the polysilicon film disposed over the n type well, implanting second impurity ions having the p type conductivity in portions of the polysilicon film except for portions which will be used as gate electrodes, annealing the resulting structure in such a manner that the first impurity ions having the p type conductivity are diffused into the n type well, thereby forming p.sup.+ source/drain, selectively removing the polysilicon film, thereby forming n and p type gate electrodes, and implanting second impurity ions having the n type conductivity in an exposed surface portion of the p type well, thereby forming n.sup.+ source/drain.

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patent: 5387552 (1995-02-01), Iranmanesh
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