Method for fabricating semiconductor devices

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material

Reexamination Certificate

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C257SE21545, C438S407000

Reexamination Certificate

active

10695798

ABSTRACT:
According to the present invention, an oxide film with the film quality almost equivalent to that of the thermal oxide can be formed by the low-temperature treatment. After removing an insulator on the active region of the substrate which constitutes a semiconductor wafer, an insulator made of, for example, silicon oxide is deposited on the main surface of the semiconductor wafer by the low pressure CVD method. This insulator is a film to form a gate insulator of MISFET in a later step. Subsequently, a plasma treatment is performed in an atmosphere containing oxygen (oxygen plasma treatment) to the insulator in the manner as schematically shown by the arrows. By so doing, the film quality of the insulator formed by the CVD method can be improved to the extent almost equivalent to that of the insulator formed of the thermal oxide.

REFERENCES:
patent: 6391803 (2002-05-01), Kim et al.
patent: 2002/0040847 (2002-04-01), Ohmi et al.
patent: 11-177047 (1999-07-01), None
Ultra Clean Society closing memorial symposium, “toward the new century led by semiconductor”, Sep. 24-25, 2000, pp. 42-52.
Katsuyuki Sekine et al., IEEE Transactions on Electron Devices, “Highly Reliable Ultrathin Silicon Oxide Film Formation at Low Temperature by Oxygen Radical Generated in High-Density Krypton Plasma”, vol. 48, No. 8, Aug. 2001, pp. 1550-1555.
Masaki Hirayama et al., IEEE, “Low-Temperature Growth of High-Integrity Silicon Oxide Films by Oxygen Radical Generated in High-Density Krypton Plasma”, 1999, pp. 499-502.

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