Method for fabricating semiconductor devices

Details Method for fabricating semiconductor devices Method for fabricating semiconductor devices

1981-03-17

1983-04-19

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 29574, H01L 21273

Patent

active

043804810

ABSTRACT:
A method of fabricating a semiconductor device comprising forming an island-shaped multi-layered structure of oxides and nitrides on the surface of a semiconductor. The multi-layered structure is selectively etched to define diffusion windows for forming a semiconductor structure in the semiconductor surface having a central region of one conductivity type surrounded by another region of a different conductivity type. A second island-like multi-layered structure is formed and is etched for controlling the duration of the etching steps by controlling the amount that the masks lift off from the insulation layers subjected to etching. The etching is carried out by side etching.

REFERENCES:
patent: Re30251 (1980-04-01), Kooi
patent: 3730778 (1973-05-01), Shannon et al.
patent: 3940288 (1976-02-01), Takagi et al.
patent: 4026740 (1977-05-01), Owen
patent: 4114255 (1978-09-01), Salsbury et al.
patent: 4233091 (1980-11-01), Kawabe

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