Method for fabricating semiconductor device with step of bonding

Metal fusion bonding – Process – Plural joints

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H01L 2160

Patent

active

057434590

ABSTRACT:
The method for fabricating a semiconductor device disclosed is to bond an inner lead and a pad of a semiconductor chip together using a bonding tool. The bonding tool has a bottom peripheral end being formed in either a circular arc shape with a curvature or a sloped surface shape with a chamfer angle. The inner lead is placed over the pad of the semiconductor chip, and the bonding tool is placed at a location inside an edge of a passivation film formed at a peripheral portion of the pad. The inner lead and the pad of the semiconductor chip are pressed together by using the bonding tool. This enables the reliable bonding of the inner lead and the semiconductor chip pad without requiring to use a bump structure.

REFERENCES:
patent: 5288006 (1994-02-01), Otsuka et al.

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