Method for fabricating semiconductor device with recess gate

Details Method for fabricating semiconductor device with recess gate Method for fabricating semiconductor device with recess gate

2011-08-02

2011-08-02

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S701000, C438S589000

Reexamination Certificate

active

07989350

ABSTRACT:
A method for fabricating a semiconductor device includes forming a structure including a sacrificial layer and a hard mask over a substrate, performing a plasma treatment over the structure including the hard mask to form a protective layer over the hard mask, etching the sacrificial layer using the protective layer as an etch barrier, and etching the substrate using the protective layer and the patterned sacrificial layer as an etch barrier to form a recess pattern.

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