Fishing – trapping – and vermin destroying
Patent
1996-04-12
1997-01-21
Quach, T. N.
Fishing, trapping, and vermin destroying
437195, 437203, 437978, H01L 21283, H01L 21311
Patent
active
055959377
ABSTRACT:
A silicon oxide film is formed on a silicon substrate with a diffusion layer, and a contact hole is formed in the silicon oxide film. A protective film made of an oxide film and a nitride film is formed over the whole surface of the substrate, and the contact hole is buried with a BPSG film. Another silicon oxide film is deposited over the substrate and an interconnection trench is formed in this silicon oxide film. After the BPSG film is removed, a TiN/Ti film is formed over the whole surface of the substrate. A Cu film is grown by MO-CVD, and thereafter the Cu film and TiN/Ti film on the surface of the substrate are partially removed by CMP. A highly reliable contact plug and a trench burying higher level interconnection are formed even where contacts are margin-less or where alignment errors are present.
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NEC Corporation
Quach T. N.
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