Method for fabricating semiconductor device with fine patterns

Details Method for fabricating semiconductor device with fine patterns Method for fabricating semiconductor device with fine patterns

2006-05-02

2006-05-02

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S710000, C438S717000

Reexamination Certificate

active

07037850

ABSTRACT:
The present invention relates to a method for fabricating a semiconductor device with realizable advanced fine patterns. The method includes the steps of: forming a hard mask insulation layer on an etch target layer; forming a hard mask sacrificial layer on the hard mask insulation layer; coating a photoresist on the hard mask insulation layer; performing selectively a photo-exposure process and a developing process to form a photoresist pattern having a first width for forming a line pattern; etching selectively the hard mask sacrificial layer by using the photoresist pattern as an etch mask to form a sacrificial hard mask having a second width; removing the photoresist pattern; etching the hard mask insulation layer by controlling excessive etching conditions with use of the sacrificial hard mask as an etch mask to form a hard mask having a third width; and etching the etch target layer by using the sacrificial hard mask and the hard mask as an etch mask to form the line pattern having a fourth width, wherein the first width is wider than the fourth width.

REFERENCES:
patent: 5219793 (1993-06-01), Cooper et al.
patent: 6171940 (2001-01-01), Huang
patent: 6200907 (2001-03-01), Wang et al.
patent: 6283131 (2001-09-01), Chen et al.
patent: 6329695 (2001-12-01), Duane et al.
patent: 6440870 (2002-08-01), Nallan et al.
patent: 6482726 (2002-11-01), Aminpur et al.
patent: 6576562 (2003-06-01), Ohuchi et al.
patent: 6682996 (2004-01-01), Blosse
patent: 6764903 (2004-07-01), Chan et al.
patent: 2004/0129361 (2004-07-01), Chen et al.
patent: 1020000025529 (2000-05-01), None

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device with fine patterns does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device with fine patterns, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device with fine patterns will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3625869