Method for fabricating semiconductor device with control of oxid

Details Method for fabricating semiconductor device with control of oxid Method for fabricating semiconductor device with control of oxid

1996-12-19

1999-11-30

Breneman, Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438743, H01L 21302

Patent

active

059942380

ABSTRACT:
A method for fabricating a semiconductor device is characterized by using a mixture chemical comprising ozone gas, anhydrous HF gas and deionized water vapor as an etchant for etching an oxide- and silicon-exposed wafer, whereby the etch selection ratio of oxide to silicon can be controlled according to necessity, so that the production yield and reliability of semiconductor device are improved. During etching of a wafer with exposed thermal oxide and exposed silicon, the etch rate ratio of oxide to silicon is controlled by changing the relative flow rates of the ozone gas, anhydrous HF gas and deionized water vapor.

REFERENCES:
patent: 4127437 (1978-11-01), Bersin et al.
patent: 4498953 (1985-02-01), Cook et al.
patent: 4502915 (1985-03-01), Carter et al.
patent: 4615764 (1986-10-01), Bobbio et al.
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 4789426 (1988-12-01), Pipkin
patent: 5073232 (1991-12-01), Ohmi et al.
patent: 5279705 (1994-01-01), Tanaka
patent: 5342808 (1994-08-01), Brigham et al.
patent: 5346586 (1994-09-01), Keller
patent: 5376233 (1994-12-01), Man
patent: 5393708 (1995-02-01), Hsia et al.
patent: 5423944 (1995-06-01), Wong
patent: 5505816 (1996-04-01), Barnes et al.
patent: 5567332 (1996-10-01), Mehta
patent: 5726100 (1998-03-01), Givens
patent: 5783496 (1998-07-01), Flanner et al.
patent: 5827437 (1998-10-01), Yang et al.
patent: 5868855 (1999-02-01), Fukazawa et al.

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