Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-04-11
2006-04-11
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S720000, C438S725000
Reexamination Certificate
active
07026253
ABSTRACT:
The present invention relates to a method for fabricating a conducting layer pattern using a hard mask of which an upper surface is flattened by the use of ArF exposure light source. The method includes the steps of: forming a conducting layer on a semiconductor substrate; forming hard mask layers on the conducting layer; forming a photoresist pattern on the hard mask layers using an ArF exposure light source in order to form a predetermined pattern; forming a first hard mask pattern by etching a second hard mask layer using the photoresist pattern as an etching mask; etching a first hard mask layer and forming a second hard mask pattern, thereby forming a first resulting structure; depositing an insulation layer on the first resulting structure; and patterning the conducting layer using the second hard mask pattern as an etching mask.
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Blakely & Sokoloff, Taylor & Zafman
Chen Kin-Chan
Hynix / Semiconductor Inc.
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