Method for fabricating semiconductor device using...

Details Method for fabricating semiconductor device using... Method for fabricating semiconductor device using...

2005-03-15

2005-03-15

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S711000, C438S714000, C216S058000, C216S067000

Reexamination Certificate

active

06867145

ABSTRACT:
The present invention provides a method for fabricating a semiconductor device with use of an ArF light source capable of minimizing deformations of a photoresist pattern for ArF during an etching process. Also, when forming the pattern, C5F8gas is used at a main etching step to compensate etch tolerance of the photoresist for ArF. By controlling process recipe properly, it is possible to minimize pattern deformations as simultaneously as to form a micronized pattern. To compensate the etch tolerance of the photoresist for ArF weaker than that of a photoresist for KrF, the main etching step is divided into three sub-steps, thereby providing a method for minimizing the pattern deformations when duplicating the pattern.

REFERENCES:
patent: 6368979 (2002-04-01), Wang et al.
patent: 6380096 (2002-04-01), Hung et al.
patent: 6602434 (2003-08-01), Hung et al.
patent: 6803318 (2004-10-01), Qiao et al.
patent: 2000-45442 (2000-07-01), None

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