Method for fabricating semiconductor device in which threshold v

Details Method for fabricating semiconductor device in which threshold v Method for fabricating semiconductor device in which threshold v

1993-07-16

1996-02-06

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437241, 437 42, 437 57, 437 52, H01L 21265, H01L 2102, H01L 2700, H01L 2170

Patent

active

054895421

ABSTRACT:
A method for fabricating a semiconductor device on a silicon substrate, consists of producing a silicon oxide film on the silicon substrate producing a thin silicon nitride film on the silicon oxide film, thermally nitriding the silicon nitride film in an atmosphere of nitrogenous gas, producing a conductive film on the silicon nitride film nitrided in the atmosphere of the nitrogenous gas, producing a gate region from the silicon oxide film, the silicon nitride film, and the conductive film, a channel region being positioned under the gate region in the silicon substrate, producing a source region in the silicon substrate adjacent to one side of the channel region, producing a drain region in the silicon substrate adjacent to another side of the channel region, and producing wiring regions on the source region, the drain region, and the gate region.

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