Method for fabricating semiconductor device having thin-film res

Details Method for fabricating semiconductor device having thin-film res Method for fabricating semiconductor device having thin-film res

1996-12-30

1999-11-23

Bowers, Charles

Semiconductor device manufacturing: process

Making passive device

Resistor

438381, 438382, H01L 2170

Patent

active

059899700

ABSTRACT:
Even when a contact hole is formed before thin-film resistor formation, a contact area exposed in the contact hole is prevented from damaging. A semiconductor element is formed in a silicon semiconductor substrate and an oxide film is formed on the surface of the semiconductor substrate. Then, a contact hole is formed on the oxide film and moreover, a CrSiN film serving as a thin-film resistor and a TiW film serving as a barrier metal are formed on the oxide film. The TiW film is patterned by a mask and the CrSiN film is patterned through chemical dry etching. Finally, an Al electrode is formed on the semiconductor element and the CrSiN film through the contact hole and moreover a protective film is formed thereon.

REFERENCES:
patent: 4510178 (1985-04-01), Paulson et al.
patent: 4591821 (1986-05-01), Paulson et al.
patent: 4700465 (1987-10-01), Sirkin
patent: 5013677 (1991-05-01), Hozumi
patent: 5030588 (1991-07-01), Hosaka
patent: 5043295 (1991-08-01), Ruggerio et al.
patent: 5128745 (1992-07-01), Takasu et al.
patent: 5310695 (1994-05-01), Suzuki
patent: 5420063 (1995-05-01), Maghsoudnia et al.
patent: 5503878 (1996-04-01), Suzuki et al.
patent: 5525831 (1996-06-01), Ohkawa et al.
patent: 5552342 (1996-09-01), Itou et al.
John L. Vossen and Werner Kern, Thin Film Processes II, 1991.
S. M. Sze, VLSI Technology, 1988.
S.Wolf, "Silicon Processing for the VLSI Era," vol. II 1990, pp. 103-110, 192, 335, Jun. 1990.
Translation of JP 2-104118, May 1991.
S.Wolf & R.N. Tauber, "Silicon Processing for the VLSI Era," vol. I, pp. 541,542, 581, Jun. 1990.

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