Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2006-06-20
2009-06-30
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Chemical etching
C438S221000, C438S427000
Reexamination Certificate
active
07553767
ABSTRACT:
A method for fabricating a semiconductor includes: etching a substrate to a predetermined depth to form an upper trench with taper edges; etching the substrate beneath the upper trench to form a lower trench with approximately vertical edges; forming a device isolation layer disposed within the upper and lower trenches; and etching an active region of the substrate defined by the upper and lower trenches to a predetermined depth to form a recess pattern for a gate.
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Cho Yong-Tae
Kim Eun-Mi
Dang Phuc T
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Hynix / Semiconductor Inc.
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