Method for fabricating semiconductor device having radiation...

Details Method for fabricating semiconductor device having radiation... Method for fabricating semiconductor device having radiation...

2011-05-03

2011-05-03

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S443000, C438S459000, C438S474000, C438S479000, C257S347000, C257SE21249, C257SE21563

Reexamination Certificate

active

07935609

ABSTRACT:
A method is provided for fabricating a semiconductor device and more particularly to a method of manufacturing a semiconductor device having radiation hardened buried insulators and isolation insulators in SOI technology. The method includes removing a substrate from an SOI wafer and selectively removing a buried oxide layer formed as a layer between the SOI wafer and active regions of a device. The method further comprises selectively removing isolation oxide formed between the active regions, and replacing the removed buried oxide layer and the isolation oxide with radiation hardened insulators.

REFERENCES:
patent: 5304840 (1994-04-01), Cable
patent: 5360752 (1994-11-01), Brady et al.
patent: 5589708 (1996-12-01), Kalnitsky
patent: 5795813 (1998-08-01), Hughes et al.
A. W. Topol, “Three-dimensional integrated circuits”; IBM j. Res. And Dev. vol. 50 No. 4/5; Jul./Sep. 2006.

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device having radiation... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device having radiation..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device having radiation... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2678063