Method for fabricating semiconductor device having group III nit

Details Method for fabricating semiconductor device having group III nit Method for fabricating semiconductor device having group III nit

1999-09-02

2000-09-12

Pham, Long

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438 22, 438513, 438688, 438796, H01L 2100

Patent

active

061177008

ABSTRACT:
First, n-type contact layer of GaN, n-type cladding layer of AlGaN, active layer of InGaN, first Mg-doped layer of AlGaN and second Mg-doped layer of GaN are grown in this order over a sapphire substrate. Thereafter, the substrate, including the second Mg-doped layer, is exposed to nitrogen plasma for about 40 minutes. As a result, Mg, which has been introduced into the first and second Mg-doped layers, is activated as an acceptor. Thus, p-type cladding layer and p-type contact layer with low resistance and excellent crystallinity can be formed out of the first and second Mg-doped layers, respectively.

REFERENCES:
patent: 5874320 (1999-02-01), Shih et al.

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