Method for fabricating semiconductor device having gate...

Details Method for fabricating semiconductor device having gate... Method for fabricating semiconductor device having gate...

2005-08-30

2005-08-30

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Resistor

C438S385000, C438S238000

Reexamination Certificate

active

06936520

ABSTRACT:
A method for fabricating a semiconductor device comprises the steps of forming a polysilicon film32on a silicon substrate10, implanting a dopant into a region of the polysilicon film32for a resistance element to be formed in, patterning the polysilicon film32to from the resistance element46of the polysilicon film32with the dopant inplanted in and gate electrodes44a, 44bof the polysilicon film32with the dopant not implanted in. Accordingly, resistance element can be formed while suppressing influences on characteristics of the transistor formed on one and the same substrate concurrently with forming the resistance element.

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