Method for fabricating semiconductor device having capacitor inc

Details Method for fabricating semiconductor device having capacitor inc Method for fabricating semiconductor device having capacitor inc

1998-02-09

2000-02-01

Bowers, Charles

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

H01L 2120

Patent

active

060202483

ABSTRACT:
A stacked storage capacitor of a dynamic random access memory cell has an accumulating electrode increased in surface area by growing hemispherical silicon grains on an amorphous silicon strip, and a barrier layer of titanium nitride is previously formed between a source region of an associated field effect transistor and the amorphous silicon strip so that phosphorus is hardly diffused from the amorphous silicon strip into the source region.

REFERENCES:
patent: 5192703 (1993-03-01), Lee et al.
patent: 5563090 (1996-10-01), Lee et al.
patent: 5597760 (1997-01-01), Hirota
patent: 5612558 (1997-03-01), Harshfield
patent: 5700710 (1997-12-01), Zenke
British Search Report dated Sep. 30, 1997.

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