Method for fabricating semiconductor device having buried contac

Details Method for fabricating semiconductor device having buried contac Method for fabricating semiconductor device having buried contac

1996-04-18

1998-03-24

Quach, T. N.

Fishing, trapping, and vermin destroying

437192, 437228ST, H01L 21283

Patent

active

057312257

ABSTRACT:
A method of forming a tungsten plug is disclosed in which a blanket tungsten layer 16 is deposited on a conductive layer including a titanium nitride film 15 and thereafter etched back using SF.sub.6 plasma until the surface of the titanium nitride (TIN) film 15 is exposed. At this time, fluorine in SF.sub.6 adheres to the surface of the TiN film. The wafer thus treated is maintained in a vacuum atmosphere and then a removing step is performed to remove fluorine from the surface of the TiN film.

REFERENCES:
patent: 4487678 (1984-12-01), Noguchi et al.
patent: 5227337 (1993-07-01), Kadomura
patent: 5422310 (1995-06-01), Ito
patent: 5521119 (1996-05-01), Chen et al.
patent: 5521121 (1996-05-01), Tsai et al.

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