Method for fabricating semiconductor device having a crack resis

Details Method for fabricating semiconductor device having a crack resis Method for fabricating semiconductor device having a crack resis

1997-10-31

1999-06-08

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

Groove

257774, H01L 2906, H01L 2348, H01L 2352, H01L 2940

Patent

active

059106794

ABSTRACT:
A method for fabricating a semiconductor device having a crack resistant contact hole and such a semiconductor device include a lower layer pattern formed over a scribe lane region of a semiconductor substrate. An insulating film is then formed over the semiconductor substrate including the lower layer pattern. Next, the insulating film is partially removed to form a contact hole and a groove surrounding the contact hole. The contact hole exposes the lower layer pattern. Since the groove surrounding the contact hole reduces compressive stress and tensile stress, it is possible to prevent a crack from occurring at the contact hole.

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