Method for fabricating semiconductor device having a capacitor a

Details Method for fabricating semiconductor device having a capacitor a Method for fabricating semiconductor device having a capacitor a

1996-08-19

1998-04-14

Niebling, John

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438239, 438240, H01L 2100

Patent

active

057390495

ABSTRACT:
A method for fabricating a semiconductor device having a capacitor exhibiting improved insulating and ferroelectric characteristics. The method involves forming a lower insulating layer over a semiconductor substrate, selectively removing the lower insulating layer to form a contact hole, forming a ruthenium film over the lower insulating layer, selectively removing the ruthenium film, thereby forming a lower electrode, and forming a ruthenium oxide film over the lower electrode. A method for forming a metal wiring is also provided. The metal wiring forming method involves forming a first metal layer over a semiconductor substrate provided with a lower insulating layer, forming a ruthenium oxide film over the first metal layer, selectively etching the ruthenium oxide film and the first metal layer, selectively forming a tungsten film on side walls of the selectively-etched first metal layer, forming an insulating film over the resulting structure, selectively removing the insulating layer, thereby forming a contact hole, forming a second metal layer over the resulting structure in such a manner that the second metal layer is connected to the first metal layer through the contact hole.

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S.Wolf and R.N. Tauber, "Silicon Processing for the VLSI Era vol. 1--Process Technology", Lattice Press, pp. 388-391 and 547-550, 1986.

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