Method for fabricating semiconductor device containing excessive

Details Method for fabricating semiconductor device containing excessive Method for fabricating semiconductor device containing excessive

1995-01-04

1997-07-29

Quach, T. N.

Fishing, trapping, and vermin destroying

437 41GS, 437 57, 437193, H01L 21283

Patent

active

056521839

ABSTRACT:
A method for fabricating a semiconductor device which includes a metal silicide film for electrically connecting a first silicon region containing a p-type impurity with a second silicon region containing an n-type impurity is disclosed. The method includes the step of depositing the metal silicide film so as to contain excessive silicon. Such excessive silicon is precipitated in silicide grain boundaries in the metal silicide film and thus makes a diffusion path of impurities along the silicide grain boundaries discontinuous.

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