Method for fabricating semiconductor device comprising...

Details Method for fabricating semiconductor device comprising... Method for fabricating semiconductor device comprising...

2006-10-03

2006-10-03

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C438S723000

Reexamination Certificate

active

07115518

ABSTRACT:
After forming a first insulating film of a silicon nitride film, a silicon nitrided oxide film or a silicon carbide film, a second insulating film of a silicon oxide film is formed on the first insulating film. In a chamber of a high density plasma etching system, the second insulating film is selectively etched by using a first etching gas including a fluorocarbon gas having a cyclic structure as a principal constituent, so as to form an upper hole in the second insulating film. Subsequently, in the same chamber, the first insulating film is selectively etched by using a second etching gas including an oxygen gas as a principal constituent, so as to form a lower hole continuous to the upper hole in the first insulating film.

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