Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement
Reexamination Certificate
2006-12-12
2006-12-12
Young, Christopher G. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Including control feature responsive to a test or measurement
C430S311000
Reexamination Certificate
active
07147977
ABSTRACT:
A wafer is held on a pin chuck, and thereafter a design pattern is transferred to the principal surface of the wafer by exposing an exposure light, which passes through a mask having the design pattern, onto the principal surface of the held wafer. The underlying surface of the wafer has irregularities with cross-sectional cycle lengths of 300 μm or more and depressions with opening diameters of 100 μm or less, and is formed such that an arithmetic mean of depths of the irregularities and depths of the depressions is 200 nm or less. The differences in distance between a focal position of the exposure light and the principal surface of the wafer held on the pin chuck are set at 50% or less of a design rule.
REFERENCES:
patent: 5494862 (1996-02-01), Kato et al.
patent: 5895966 (1999-04-01), Penchuk
Fujisawa et al., “Analysis of Wafer Flatness for CD Control in Photolithography”,Optical Microlithography XV, Proceedings of SPIE vol. 4691 (2002), pp. 802-809.
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Young Christopher G.
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