Method for fabricating semiconductor device and...

Details Method for fabricating semiconductor device and... Method for fabricating semiconductor device and...

2007-06-11

2010-10-05

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S204000, C257S206000, C257S351000, C257SE21632, C257SE27046, C257SE27064, C257SE27108, C438S199000

Reexamination Certificate

active

07808001

ABSTRACT:
An n-channel MOS transistor and a p-channel MOS transistor are formed on a semiconductor substrate100. The p-channel MOS transistor includes a gate electrode102a, a first offset sidewall103aformed on side surfaces of the gate electrode102aso as to contain fine particles110of group IV semiconductor therein. The n-channel MOS transistor includes a gate electrode102band a second offset sidewall103bformed on side surfaces of the gate electrode102b. After ion implantation of group IV semiconductor, heat treatment is performed to form the fine particles110, so that a thickness of the first offset sidewall103acan be made larger than a thickness of the second offset sidewall103b.

REFERENCES:
patent: 2006/0237816 (2006-10-01), Nakajima et al.
patent: 2008/0122002 (2008-05-01), Pei et al.
patent: 2008/0197498 (2008-08-01), Kaushik et al.
patent: 2009/0242893 (2009-10-01), Tomiyasu
patent: 2004-303789 (2004-10-01), None

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