Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

1995-12-15

1997-11-11

Dang, Trung

Fishing, trapping, and vermin destroying

437 41DM, 437 44, 437 70, 437 72, H01L 21265

Patent

active

056863276

ABSTRACT:
A method for fabricating a semiconductor device, capable of forming an element-isolating insulating film for MOS transistors in a self-aligned manner during formation of the MOS transistors on a substrate, thereby simplifying the fabrication of the semiconductor device. The substrate is vertically etched to form a protruded portion thereof. By the vertical height of the protruded substrate portion, the gate length of each corresponding MOS transistor can be adjusted. This results in an improvement in the integration degree of the semiconductor device. Accordingly, it is possible to easily apply the least design method to design of highly integrated semiconductor devices.

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