Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2008-06-24

2008-06-24

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S556000, C438S686000, C257SE21009, C257SE21021, C257SE21104, C257SE21311, C257SE21664

Reexamination Certificate

active

07390678

ABSTRACT:
A PLZT film (30) is formed as the material film of a capacitor dielectric film and a top electrode film (31) is formed on the PLZT film (30). The top electrode film (31) comprises two IrOxfilms having different composition. Subsequently, back face of a semiconductor substrate (11) is cleaned and an Ir adhesion film (32) is formed on the top electrode film (31). Substrate temperature is set at 400° C. or above at that time. Thereafter, a TiN film and a TEOS film are formed sequentially as a hard mask. In such a method, carbon remaining on the top electrode film (31) after cleaning the back face is discharged into the chamber while the temperature of the semiconductor substrate (11) is kept at 400° C. or above in order to form the Ir adhesion film (32). Consequently, adhesion is enhanced between a TiN film being formed subsequently and the Ir adhesion film (32) thus preventing the TiN film from being stripped.

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