Fishing – trapping – and vermin destroying
Patent
1994-02-02
1995-08-08
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 33, 437927, 437 32, H01L 21265
Patent
active
054398320
ABSTRACT:
Semiconductor-device fabricating steps include the steps of forming a first conducting film serving as an electrode on a substratum semiconductor layer through an insulating film, forming an opening in partial regions of the first conducting film and the insulating film, and thereafter forming a second conducting film for connecting the first conducting film with the substratum semiconductor layer on the inner periphery or in the vicinity of the opening, then forming a second electrode in the opening through an insulating side wall, moreover patterning the first conducting film before selectively etching and removing the insulating film under the first conducting film, and thereby forming a space between the first conducting film and the substratum semiconductor layer. Moreover, the semiconductor-device fabrication steps include the steps of patterning the first insulating film and first conducting film formed in order on the substratum semiconductor layer to from an electrode made of the first conducting film, thereafter covering the whole with a second insulating film, then patterning the second insulating film to form an opening in a region including an electrode, selectively etching and removing the first insulating film under the electrode through the opening, and thereby forming a space between the electrode and substratum semiconductor layer.
REFERENCES:
patent: 5021357 (1991-06-01), Taguchi et al.
S. Nakamura et al., International Electron Devices Meeting pp. 445-448, 1992.
Chaudhuri Olik
Dutton Brian K.
Fujitsu Limited
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