Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2011-08-16

2011-08-16

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C257SE21014

Reexamination Certificate

active

07998825

ABSTRACT:
A method for fabricating a semiconductor device includes: forming an etch stop pattern over a conductive layer, the etch stop pattern having a first opening exposing a top surface of the conductive layer; forming an insulation layer over the etch stop pattern; selectively etching the insulation layer to form a second opening exposing the top surface of the conductive layer; and enlarging the second opening until the etch stop pattern is exposed.

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Korean Notice of Allowance for Korean application No. 10-2008-0046973, Feb. 2010.
Chinese Office Action for application No. 200910007223.X, Aug. 2010.

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