Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2011-08-09

2011-08-09

Deo, Duy-Vu N (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S707000, C438S708000, C438S709000, C438S710000, C438S725000

Reexamination Certificate

active

07994065

ABSTRACT:
A method for fabricating a semiconductor device includes stacking a spin on carbon (SOC) layer and an multifunction hard mask (MFHM) layer on a substrate, forming a photoresist pattern over the MFHM layer, first etching the MFHM layer using a first amount of a fluorine-based gas, second etching the MFHM layer using a second amount of a fluorine-based gas, wherein the second amount is less than the first amount, etching the SOC layer using the MFHM layer as an etch barrier, and etching the substrate using the SOC layer and the MFHM layer as an etch barrier.

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