Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

1994-12-16

1995-08-22

Fourson, George

Fishing, trapping, and vermin destroying

437 89, 148DIG12, H01L 2176

Patent

active

054440149

ABSTRACT:
Disclosed is a method of fabricating an SOI substrate, comprising the steps of forming a first insulating layer on a single crystal silicon substrate; patterning the first insulating layer to form an opening; growing a single crystal silicon in the opening to form active and inactive regions; polishing the active region 31 as the first insulating layer as a polishing stopper to form a planarized surface; depositing a second insulating layer on the planarized surface; bonding a bonding substrate to the second insulating layer; and polishing the silicon substrate using the first insulating layer as a stopper up to a surface of the active region. By the method, a stray capacitance occurring between an SOI substrate and a metal wiring portion formed thereon can be significantly reduced owing to a relatively thick insulating layer therebetween, and a parasitic capacitance can be eliminated owing to an insulating layer interposed between a bonding substrate and an active region to be used as a buried collector.

REFERENCES:
patent: 3929528 (1975-12-01), Davidson et al.
patent: 5298449 (1994-03-01), Kikuchi

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